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Photoresisit Stripping
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Process Highlights
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Applications

Photoresist Stripping

Compound Semiconductor

Failure Analysis

MEMS

Deposition

Other

Process Highlights

 


Materials supported by Trion’s tools include:

MATERIAL

GAS USED

ETCH  

Aluminum (Al) - anisotropic

Cl2 + BCl3

Aluminum (Al) - isotropic

Cl2 + BCl3

Aluminum Gallium Arsenide (AlGaAs)

SiCl4 + BCl3 + Ar

Aluminum Nitride (AlN)

Cl2 + BCl3

Black Diamond

CF4

BPSG

CHF3/ (02 or Ar)

Carbon (C)

O2 + Argon

Chrome (Cr)

Cl2 + O2

Chrome (Cr)

Cl2 + O2

Copper (Cu)

BCl3 + Cl2  (heat)

Epoxy

O2 + %5 CF4

Gallium Antimonide (GaSb)

Ar + Cl2 (5:1)

Gallium Arsenide (GaAs) - thinning

Cl2 + BCl3 (isotropic)

Gallium Arsenide (GaAs)  - profile

Cl2+BCl3 (anisotropic)

Gallium Arsenide (GaAs)

Cl2 + BCl3

GaAs/AlGaAs - selective etch

SF6 + BCl3

Gallium Nitride (GaN)

Cl2

Gold

HBr + BCI3

Graphite (C)

O2 + Argon

Indium & Aluminum - containing III-V's

HBr + BCI3

Indium Phosphide (InP)

CH4 + H2

Indium Phosphide (InP)

HBr + BCI3

Iridium (Ir)

SF6

Molybdenum (Mo)

SF6

Oxynitride

CF4 + 5% O2

Photoresist

O2

Platinum

Cl2, Ar (90oC)

Polyimide

O2 + Ar

Polysilicon - isotropic

Cl2

Polysilicon - anisotropic

Cl2

PSG

CF4 /  (O2 or Ar)

Quartz

CHF3 + CF4

Sapphire (Al2O3)

BCl3

Silicon (Si)

CF4 + 2% O2

Silicon Carbide (SiC)

NF3 + O2

Silicon Dioxide (SiO2)

CF4 + CHF3

SiLK (Pr)

CF4

SU8 (Pr)

O2 + CF4

SU8 (Pr)

O2 + Ar + CF4

Silicon Nitride (Si3N4)

SF6/O2 or CF4/O2

Tantalum - anisotropic

CF4 + O2

Tantalum - isotropic

CF4 + O2

Tantalum Nitride (TaN)

CF4 + O2

Titanium (Ti)

Cl2 + BCl3

Tinitride (TiN)

CF4 + O2

Titanium Tungsten (TiW) - isotropic

SF6

Titanium Tungsten (TiW) - anisotropic

SF6

Tungsten (W) - isotropic

SF6

Tungsten (W) - anisotropic

SF6

Amorphous Silicon

SiH4

DEPOSITION

 

Oxide

TEOS + O2

Oxide - faster deposition

SiH4 + N20 +N2

Nitride

NH3 + DES + N2

Nitride - faster deposition

N2 + NH3 + SiH4

Silicon carbide

Trimethylsilane or Methane (CH4) & SiH4

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